any changing of specification will not be informed individual MMDT2907A pnp silicon multi-chip transistor http://www.secosgmbh.com ele k troni sche bauelemente p o w e r d i s s i p a t i o n * features p c m : 0 . 1 5 w ( t a m p . = 2 5 c ) c o l l e c t o r c u r r e n t i c m : - 0 . 6 a c o l l e c t o r - b a s e v o l t a g e v ( b r ) c b o : - 6 0 v o p e r a t i n g & s t o r a g e j u n c t i o n t e m p e r a t u r e t j , t s t g : - 5 5 c ~ + 1 5 0 c o o o e l e c t r i c a l c h a r a c t e r i s t i c s ( t a m b = 2 5 o c u n l e s s o t h e r w i s e s p e c i f i e d ) m a r k i n g : k 2 f , 2 f parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo ic= -10 a i e =0 -60 v collector-emitter breakdown voltage v (br)ceo ic= -10ma i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e =-10 a i c =0 -5 v collector cut-off current i cbo v cb =-50 v , i e =0 -0. 01 a emitter cut-off current i ebo v eb = -3v , i c =0 -0. 01 a h fe(1) v ce =-10v, i c = -0.1ma 75 h fe(2) v ce =-10v, i c = -1ma 100 h fe(3) v ce =-10v, i c =-10ma 100 h fe(4) v ce =-10v, i c = -150ma 100 300 dc current gain h fe(5) v ce =-10v, i c =-500ma 50 v ce (sat)1 i c =-150 ma, i b =-15ma -0.4 v collector-emitter saturation voltage v ce (sat)2 i c =-500 ma, i b =- 50ma -1.6 v v be (sat)1 i c =-150 ma, i b =-15ma -1.3 v base-emitter saturation voltage v be (sat)2 i c =-500 ma, i b = -50ma -2.6 v transition frequency f t v ce =-20v, i c = -50ma f= 100mhz 200 mhz output capacitance c ob v cb =-10v, i e = 0 f= 1mhz 8 pf input capacitance c ib v eb =-2v, i c = 0 f= 1mhz 30 pf delay time t d 10 ns rise time t r v cc =-30v, i c =-150ma,i b1 =-15ma 40 ns storage time t s 225 ns fall time t f v cc =-6v, i c =-150ma i b1 = i b2 = -15ma 60 ns 01 -jan-200 7 rev. c page 1 of 3 c 2 b 1 e 1 e 2 b 2 c 1 s o t - 3 6 3 d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r s ) . 0 1 4 ( 0 . 3 5 ) . 0 0 6 ( 0 . 1 5 ) . 0 8 7 ( 2 . 2 0 ) . 0 7 9 ( 2 . 0 0 ) . 0 5 5 ( 1 . 4 0 ) . 0 4 7 ( 1 . 2 0 ) . 0 2 6 t y p ( 0 . 6 5 t y p ) . 0 9 6 ( 2 . 4 5 ) . 0 8 5 ( 2 . 1 5 ) . 0 2 1 r e f ( 0 . 5 2 5 ) r e f . 0 1 8 ( 0 . 4 6 ) . 0 1 0 ( 0 . 2 6 ) . 0 0 6 ( 0 . 1 5 ) . 0 0 3 ( 0 . 0 8 ) . 0 5 3 ( 1 . 3 5 ) . 0 4 5 ( 1 . 1 5 ) . 0 4 3 ( 1 . 1 0 ) . 0 3 5 ( 0 . 9 0 ) . 0 3 9 ( 1 . 0 0 ) . 0 3 5 ( 0 . 9 0 ) . 0 0 4 ( 0 . 1 0 ) . 0 0 0 ( 0 . 0 0 ) 8 o o 0 rohs compliant product a suf fix of "-c" specifies halogen-free
any changing of specification will not be informed individual MMDT2907A pnp silicon multi-chip transistor typical characteristics figure 3. dc current gain i c , c ollector c urrent (ma) 0.3 0.5 0.7 1.0 3.0 0.2 0.1 t j = 125 c 25 c 55 c v ce = 1.0 v v ce = 10 v h f e , n ormalized c urrent g ain 2.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 figure 4. collector saturation region i b , b ase c urrent (ma) 0.4 0.6 0.8 1.0 0.2 v , c ollector e mitter v oltage (v) 0 ce i c = 1.0 ma 0.005 10 ma 0.01 100 ma 500 ma 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 figure 5. turnon time i c , c ollector c urrent 300 5.0 figure 6. turnoff time i c , c ollector c urrent (ma) 5.0 t, t ime (ns) t, t ime (ns) 200 100 70 50 30 20 10 7.0 5.0 3.0 7.0 10 20 30 50 70 100 200 300 500 t r 2.0 v t d @ v be(off) = 0 v v cc = 30 v i c /i b = 10 t j = 25 c 500 300 100 70 50 30 20 10 7.0 5.0 7.0 10 20 30 50 70 100 200 300 500 200 t f t s = t s 1/8 t f v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c http://www.secosgmbh.com elektronische bauelemente 01 -jan-2006 rev. b page 2 of 3
any changing of specification will not be informed individual MMDT2907A pnp silicon multi-chip transistor typical small signal characteristics noise figure v ce = 10 vdc, t a = 25 c figure 7. frequency effects f, f requency (khz) 10 0.01 figure 8. source resistance effects r s , s ource r esistance (ohms) n f , n oise f igure (db) n f , noise figure (db) f = 1.0 khz i c = 50 m a 100 m a 500 m a 1.0 ma r s = optimum source resistance 8.0 6.0 4.0 2.0 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 10 8.0 6.0 4.0 2.0 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k i c = 1.0 ma, r s = 430 w 500 m a, r s = 560 w 50 m a, r s = 2.7 k w 100 m a, r s = 1.6 k w figure 9. capacitances r everse v oltage (vo l ts) 30 figure 10. currentgain e bandwidth product i c , c ollector current (ma) c, c apacitance (pf) 0.1 2.0 figure 11. aono voltage i c , c ollector c urrent (ma) 1.0 figure 12. temperature coefficients i c , c ollector c urrent (ma) v , v oltage (v) t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v r v c for v ce( s at) f t , c urrent g ain e b andwidth p roduct (mhz) c oefficient (mv / c) 20 10 7.0 5.0 3.0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 400 300 200 100 80 60 40 30 20 1.0 2.0 5.0 10 20 50 100 200 500 1000 0.8 0.6 0.4 0.2 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 +0.5 0 0.5 1.0 1.5 2.0 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 c eb c cb v ce = 20 v t j = 25 c r vb for v be http://www.secosgmbh.com elektronische bauelemente 01 -jan-200 7 rev.c page 3 of 3
|
